Characterization of 4H-SiC Homoepitaxial Films on.Epitaxial Deposition of SiC onto 4H SiC using a Ho.(Invited) Understanding of Growth Kinetics of Ther. Properties 4H-SiC GaN Diamond Lattice constant () 3.073 a 10.053 c 4.51 3.57 Thermal expansion (x10-6) oC - 5.6 0.08 Density (g/cm3) - 3.51 Melting point (oC) 2830 - 4000 Bandgap (eV) 3.26 3.45 5.45 Saturated electron velocity (x107 cm/s) 2.0 2.2 2.7 Mobility (cm2/V-s) Electron Hole 250 2200 1600 Breakdown Voltage (x105 V/cm) 30.MPD ＜ 10cm-2 ； MPD ＜ 30 cm-2 ； MPD ＜ 100 cm-2īow/Warp/TTV☐.5° 3.5°towards toward + 0.5°ĭouble face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm Xiamen Powerway Advanced Material Co.,Ltd offers SiC 4H as follows: Accordingly thermal conductivity contributions from both lattice and carrier components are relatively small for N-type sample. Temperature dependent Raman spectrum showed that the life time of phonons for N-type sample is shorter than that for SI sample. For semiconductor materials, total thermal conductivity is the sum of the contributions of lattice and carrier thermal conductivities. (1995) 4H-SiC: 0.36m o : 6H-SiC: 0.57m o : Remarks: Referens: Effective hall mass of density of state m v 3C-SiC: 0.6 m o: 300 K: Son et al. It is approximately 280 W/mK at the room temperature. For V-doped SI sample, the thermal conductivity is proportional to T−1.256 and it is about 347 W/mK at room temperature, bigger than that of N-type sample. The thermal conductivity normal to c-axis was calculated from the measured data for both N-type and V-doped semi-insulating (SI) 4H-SiC single crystals. The thermal conductivity of N-type sample normal to c axis is proportional to T−1.26 . Thermal diffusivity and specific heat of 4H-SiC crystals as a function of temperature are measured, respectively, from room temperature to 600 ☌.

Sic lattice constant